DC, RF, and noise characteristics of carbon-doped base InP/InGaAs heterojunction bipolar transistors

Author

Hong, Brian W-P ; Song, Jong-In ; Palmstrom, C.J. ; Van der Gaag, Bart ; Chough, Kyung-Bae ; Hayes, John R.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

41

Issue

1

fYear

1994

fDate

1/1/1994 12:00:00 AM

Firstpage

19

Lastpage

25

Abstract

The first successful demonstration of high-performance InP/InGaAs heterojunction bipolar transistors utilizing a highly carbon-doped base is reported. The detailed device characteristics including dc, RF, and noise performance have been investigated. For the first time base layers free of hydrogen passivation have been obtained using chemical beam epitaxy. The HBT´s showed almost ideal dc characteristics; a gain independent of collector current, a near unity ideality factor, a very small offset-voltage, and a high breakdown voltage. Devices having two 1.5 μm×15 μm emitter fingers exhibited a maximum f_T of 115 GHz and f_max of 52 GHz. The device also exhibited a minimum noise figure of 3.6 dB and associated gain of 13.2 dB at a collector current level of 2 mA where a f_T of 29 GHz and f_max of 23 GHz were measured. The nearly ideal dc characteristics, excellent speed performance, and RF noise performance demonstrate the great potential of the carbon-doped base InP/InGaAs HBT´s

Keywords

III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device noise; solid-state microwave devices; 115 GHz; 13.2 dB; 2 mA; 23 GHz; 29 GHz; 3.6 dB; 52 GHz; C-doped base; DC characteristics; InP; InP-InGaAs:C; InP/InGaAs heterojunction bipolar transistors; RF characteristics; breakdown voltage; chemical beam epitaxy; collector current voltage characteristics; gain; ideality factor; minimum noise figure; noise characteristics; offset-voltage; speed performance; Chemicals; Epitaxial growth; Fingers; Heterojunction bipolar transistors; Hydrogen; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Passivation; Radio frequency;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.259615

Filename

259615