Title :
Simple model of large-signal properties of 1 W f.e.t. at 5 GHz
Author :
Kotzebue, K.L. ; Ehlers, E.R.
Author_Institution :
University of California, Department of Electrical & Computer Engineering, Santa Barbara, USA
Abstract :
Extensive large-signal measurements performed on a 1 W microwave f.e.t. at 5 GHz verify that its added-power characteristics can be accurately predicted from a simple analytic model requiring only two large-signal measurements for each frequency of interest. This model makes possible the use of linear circuit theory to design broadband matching circuits for optimum added-power performance.
Keywords :
field effect transistors; power transistors; semiconductor device models; solid-state microwave devices; 1 W; 5 GHz; FET; added power characteristics; large scale properties; microwave; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790168
