Title :
The tunneling P-N junction
Author :
Longini, Richard L.
Author_Institution :
Westinghouse Research Laboratories, Pittsburgh, Pa.
Abstract :
The tunneling probability in an Esaki diode is very much dependent on the electric field strength which is itself dependent on the local fluctuations of ion concentration. The fluctuation of depletion layer thickness due to randomness of ion position is calculated. It is shown that most of the tunneling current is carried by only a small fraction of the total area.
Keywords :
Diodes; Electron devices; Fluctuations; Helium; Impurities; Laboratories; Microscopy; P-n junctions; Probability distribution; Shape; Tunneling;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.14894
