Analysis of the latch and breakdown phenomena in N and P channel thin film SOI MOSFET´s as a function of temperature

Author

Balestra, F. ; Jomaah, J. ; Ghibaudo, G. ; Faynot, O. ; Auberton-Herve, A.J. ; Giffard, B.

Author_Institution

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France

Volume

41

Issue

1

fYear

1994

fDate

1/1/1994 12:00:00 AM

Firstpage

109

Lastpage

112

Abstract

A study of the latch and breakdown phenomena in thin film N- and P-channel SOI MOSFET´s is performed as a function of temperature. For P-type MOSFET´s, for which no investigation of the parasitic bipolar transistor has been carried out, we show that latch problems are observed in the subhalf-micrometer range, while this feature is emphasized in the micrometer range for N-channel transistors. In addition, it is demonstrated by theoretical considerations and experimental results that these parasitic effects are strongly reduced at liquid nitrogen temperature and vanish almost entirely at liquid helium temperature. Similar improvements are obtained at low temperature in both N and P-channel SIMOX MOSFET´s

Keywords

SIMOX; insulated gate field effect transistors; 300 K; 4.2 K; 77 K; N channel; P channel; SIMOX MOSFET; Si-SiO₂; breakdown phenomena; latch phenomena; liquid helium temperature; liquid nitrogen temperature; low temperature; micrometer range; parasitic bipolar transistor; subhalf-micrometer range; temperature dependence; thin film SOI MOSFET; Bipolar transistors; Electric breakdown; Helium; MOSFET circuits; Nitrogen; Semiconductor thin films; Temperature; Thin film devices; Thin film transistors; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.259627

Filename

259627