• DocumentCode
    1017861
  • Title

    Pulsed GaAs f.e.t. operation for high peak output powers

  • Author

    Wade, P.C. ; Rutkowski, D. ; Drukier, I.

  • Author_Institution
    Microwave Semiconductor Corporation, Somerset, USA
  • Volume
    15
  • Issue
    19
  • fYear
    1979
  • Firstpage
    591
  • Lastpage
    593
  • Abstract
    Significant increases in GaAs f.e.t. X-band power output are made possible by pulsed operation, using pulse durations sufficiently short that thermal limitations are alleviated. Significantly higher-voltage operation is also possible under these conditions, with further improvement in power output and gain. As much as 5.9 W of peak power output has been obtained at 8 GHz from a device capable of 2.5 W c.w. output at 6 GHz.
  • Keywords
    field effect transistors; power transistors; solid-state microwave devices; GaAs FET; X-band; gain; high peak power output; pulsed operation; thermal limitations;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790425
  • Filename
    4256033
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1017861