Title :
Injected carrier concentrations in diffused silicon transistors by observation of interband carrier recombination
Author_Institution :
Bell Telephone Laboratories, Inc., Allentown, Pa.
Keywords :
Capacitance; Capacitors; Copper; Diodes; Fabrication; Frequency; Geometry; Germanium; Impedance; Inductance; Instruments; Material storage; Silicon; Solid state circuits; Strips; Switching circuits; Telephony;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.14903
