Title :
A germanium ultra-high speed switching transistor
Author :
Granberry, D. ; Martin, D.D. ; Orris, E. ; Chang, C.M.
Author_Institution :
Texas Instruments Inc., Dallas, Tex.
Keywords :
Capacitance; Copper; Diodes; Fabrication; Frequency; Geometry; Germanium; Instruments; Material storage; Silicon; Switching circuits; Thickness measurement; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.14905
