Title :
An n-p-n germanium double-diffused mesa transistor
Author :
Jacobs, R.A. ; Abshire, R.H. ; Wilson, Robert W. ; Anetsmann, H.
Author_Institution :
Motorola, Inc., Phoenix, Ariz.
Keywords :
Capacitance; Diodes; Fabrication; Frequency; Geometry; Germanium; Instruments; Jacobian matrices; Material storage; Ohmic contacts; Passivation; Poles and towers; Silicon; Switching circuits;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.14907
