Title :
Impact ionization in GaAs MESFETs
Author :
Hui, Kelvin ; Hu, Chenming ; George, Peter ; Ko, Ping K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
3/1/1990 12:00:00 AM
Abstract :
A method to measure impact ionization current in GaAs MESFETs is presented. The impact ionization current is then used to calculate the maximum electric field in the channel and the impact ionization coefficient. Data for the electron impact ionization coefficient in [110] GaAs are extended beyond previous studies by five orders of magnitude. Impact ionization is taken into account in a new gate current model.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; impact ionisation; semiconductor device models; GaAs; MESFETs; electron impact ionization coefficient; gate current model; impact ionization current; maximum electric field; Current density; Current measurement; Degradation; Electron mobility; Estimation error; Gallium arsenide; Impact ionization; Kelvin; MESFETs;
Journal_Title :
Electron Device Letters, IEEE
