DocumentCode
1018048
Title
Impact ionization in GaAs MESFETs
Author
Hui, Kelvin ; Hu, Chenming ; George, Peter ; Ko, Ping K.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
11
Issue
3
fYear
1990
fDate
3/1/1990 12:00:00 AM
Firstpage
113
Lastpage
115
Abstract
A method to measure impact ionization current in GaAs MESFETs is presented. The impact ionization current is then used to calculate the maximum electric field in the channel and the impact ionization coefficient. Data for the electron impact ionization coefficient in [110] GaAs are extended beyond previous studies by five orders of magnitude. Impact ionization is taken into account in a new gate current model.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; impact ionisation; semiconductor device models; GaAs; MESFETs; electron impact ionization coefficient; gate current model; impact ionization current; maximum electric field; Current density; Current measurement; Degradation; Electron mobility; Estimation error; Gallium arsenide; Impact ionization; Kelvin; MESFETs;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.46951
Filename
46951
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