A 6-GHz Low-Power BiCMOS SiGe:C 0.25 μ m Direct Digital Synthesizer

Author

Thuries, Stéphane ; Tournier, Éric ; Cathelin, Andreia ; Godet, Sylvain ; Graffeuil, Jacques

Author_Institution

Paul Sabatier Univ., Toulouse

Volume

18

Issue

1

fYear

2008

Firstpage

46

Lastpage

48

Abstract

A 6-GHz low power SiGe direct digital synthesizer (DDS) is reported. This letter discusses the BiCMOS design improvements used for the phase accumulator and the phase-to-amplitude conversion in order to achieve higher speed operation and lower power consumption compared to existing DDS. The phase accumulator is based on a three-level BiCMOS logic, and the phase-to-amplitude conversion is completed through a bipolar differential pair. The circuit has been processed in a BiCMOS SiGe:C 0.25 mum technology. The power consumption is 308 mW and it operates from a 2.8 V supply. The chip core area is 1 mm².

Keywords

BiCMOS integrated circuits; BiCMOS logic circuits; direct digital synthesis; low-power electronics; BiCMOS logic; bipolar differential pair; low power SiGe direct digital synthesizer; low-power BiCMOS SiGe; phase accumulator; phase-to-amplitude conversion; power 308 mW; size 0.25 mum; voltage 2.8 V; BiCMOS integrated circuits; CMOS logic circuits; Energy consumption; Frequency; Germanium silicon alloys; Microelectronics; Signal generators; Silicon germanium; Synthesizers; Transfer functions; Bicmos; SiGe; direct digital synthesizer (DDS); synthesizer;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.911994

Filename

4408475