Title :
Reduction of growth rate in Bi-substituted bubble garnets using MoO3- and V2O5- added flux
Author :
Hosoe, Y. ; Andoh, K. ; Ikeda, T. ; Suzuki, R.
Author_Institution :
Central Research Laboratory, Hitachi, Kokubunji, Tokyo, Japan
fDate :
9/1/1986 12:00:00 AM
Abstract :
The growth rate of Bi-substituted bubble garnet films grown by liquid phase epitaxy has been reduced by adding MoO3or V2O5to PbO-Bi2O3flux. The growth rate can be reduced by decreasing the solute concentration. We have found that the solute concentration can be decreased by increasing the cation ratio of Mo/Pb or V/Pb in the melt, while the saturation temperature has been kept constant. The growth rate can be reduced to less than 50% of its original value when Mo/Pb is more than 0.2, and to less than 70% of its original value when V/Pb is more than 0.2. The changes in film properties with increasing Mo/Pb or V/Pb are so small that they can be recovered by small adjustments in the melt composition.
Keywords :
Magnetic bubble films; Anisotropic magnetoresistance; Bismuth; Epitaxial growth; Garnet films; Iron; Laboratories; Phase change materials; Substrates; Temperature control; Thickness control;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1986.1064490