• DocumentCode
    1018076
  • Title

    Electrochemical carrier concentration profiling in silicon

  • Author

    Sharpe, C.D. ; Lilley, P. ; Elliott, C.R. ; Ambridge, T.

  • Author_Institution
    University of Manchester, Electrical Engineering Laboratories, Manchester, UK
  • Volume
    15
  • Issue
    20
  • fYear
    1979
  • Firstpage
    622
  • Lastpage
    624
  • Abstract
    The application to silicon of an electrochemical technique, allowing automatic profiling over large depths and a wide range of carrier concentration, is described.
  • Keywords
    carrier density; elemental semiconductors; semiconductor-electrolyte boundaries; silicon; Si; anodic dissolution; capacitance voltage measurements; compound semiconductors; electrochemical carrier concentration profiling; electrochemical dissolution process; electrolytic Schottky barrier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790444
  • Filename
    4256057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018076