Title :
Preparation and properties of GaAs layers for novel f.e.t. structures
Author :
Griffiths, R.J.M. ; Blenkinsop, I.D. ; Wight, D.R.
Author_Institution :
Royal Signals and Radar Establishment, Baldock, UK
Abstract :
N-type GaAs/Ga0.4Al0.6As heterostructures have been grown on semi-insulating GaAs substrates using metal-organic chemical vapour deposition. The GaAs layers were mounted on insulator supports and the substrates and Ga0.4Al0.6As removed using a preferential etching procedure. The preparation and electrical properties of submicrometre thick insulator-supported n-type GaAs layers are described.
Keywords :
III-V semiconductors; chemical vapour deposition; field effect transistors; gallium arsenide; FET; GaAs layers; GaAs-Ga0.4Al0.6As heterostructures; etching; metal organic CVD; semi insulating GaAs substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790448
