DocumentCode
1018112
Title
Preparation and properties of GaAs layers for novel f.e.t. structures
Author
Griffiths, R.J.M. ; Blenkinsop, I.D. ; Wight, D.R.
Author_Institution
Royal Signals and Radar Establishment, Baldock, UK
Volume
15
Issue
20
fYear
1979
Firstpage
629
Lastpage
630
Abstract
N-type GaAs/Ga0.4Al0.6As heterostructures have been grown on semi-insulating GaAs substrates using metal-organic chemical vapour deposition. The GaAs layers were mounted on insulator supports and the substrates and Ga0.4Al0.6As removed using a preferential etching procedure. The preparation and electrical properties of submicrometre thick insulator-supported n-type GaAs layers are described.
Keywords
III-V semiconductors; chemical vapour deposition; field effect transistors; gallium arsenide; FET; GaAs layers; GaAs-Ga0.4Al0.6As heterostructures; etching; metal organic CVD; semi insulating GaAs substrates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790448
Filename
4256061
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