Title :
Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors
Author :
Jayant Baliga, B.
Author_Institution :
General Electric Company, Corporate Research and Development Center, Schenectady, USA
Abstract :
A new gate structure is described for power thyristors which uses the m.o.s. field effect to control the anode breakover voltage. Experimental devices have been fabricated using a V-groove etched in (100) oriented wafers and forming the gate in these grooves. Both enhancement- and depletion-mode devices have been demonstrated.
Keywords :
metal-insulator-semiconductor devices; thyristors; MOS depletion mode thyristor; MOS enhancement mode thyristor; V groove; anode breakover voltage; gate structure; power thyristors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790459
