Title :
Automatic electrochemical profiling of carrier concentration in indium phosphide
Author :
Ambridge, T. ; Ashen, D.J.
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
The technique of carrier concentration profiling over a wide doping and depth range, via automatic C/V analysis and disolution at an electrolytic Schottky barrier, is here demonstrated for indium phosphide
Keywords :
III-VI semiconductors; carrier density; indium compounds; semiconductor-electrolyte boundaries; InP; anodic dissolution; automatic capacitance voltage measurements; doping; electrochemical carrier concentration profiling; electrolytic Schottky barrier; semiconductor electrolyte boundaries;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790460
