Suppression of lateral autodoping from arsenic buried layer by selective epitaxy capping

Author

Chiu, Tzu-Yin ; Lee, Kwing F. ; Lau, Maureen Y. ; Finegan, Sean N. ; Morris, Mark D. ; Voshchenkov, Alexander M.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

11

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

123

Lastpage

125

Abstract

An effective way to suppress lateral autodoping from the heavily arsenic-doped buried layer during silicon epitaxy is described. By using this simple technique, collector-substrate capacitance (C/sub cs/) is minimized. This process is ideal for high-speed BiCMOS and bipolar technology. A thin epilayer is first grown selectively on the buried layer. This selectively grown film suppresses the release of arsenic during the subsequent epi growth. High-performance bipolar devices have been fabricated in this epi material. Electrical measurements indicate that the crystalline quality is excellent.<>

Keywords

BIMOS integrated circuits; bipolar integrated circuits; integrated circuit technology; semiconductor doping; semiconductor epitaxial layers; vapour phase epitaxial growth; Si:As; bipolar technology; collector-substrate capacitance; crystalline quality; high-speed BiCMOS; lateral autodoping; selective epitaxy capping; selectively grown film; BiCMOS integrated circuits; Capacitance; Conductivity; Contamination; Crystalline materials; Doping; Epitaxial growth; Impurities; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46954

Filename

46954