• DocumentCode
    1018296
  • Title

    InGaAsP p-i-n photodiodes with low dark current and small capacitance

  • Author

    Burrus, C.A. ; Dentai, A.G. ; Lee, T.P.

  • Author_Institution
    Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    15
  • Issue
    20
  • fYear
    1979
  • Firstpage
    655
  • Lastpage
    656
  • Abstract
    p-i-n photodiodes with ND as low as 1¿2×1015 cm¿3 in the I-region were fabricated from InGaAsP (¿=1.26 ¿m). At ¿20 V, the 2.5 ¿m I-region of the 150 ¿m diameter mesas was completely swept out, the junction capacitance was below 1 pF, the dark current was less than 0.2 nA and the external quantum efficiency was 63% without a.r. coatings.
  • Keywords
    optical communication equipment; photodiodes; InGaAsP p-i-n photodiodes; MM waves; carrier concentration; dark current; junction capacitance; leakage current; optical communication equipment; quantum efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790466
  • Filename
    4256083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018296