Title :
InGaAsP p-i-n photodiodes with low dark current and small capacitance
Author :
Burrus, C.A. ; Dentai, A.G. ; Lee, T.P.
Author_Institution :
Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
p-i-n photodiodes with ND as low as 1¿2×1015 cm¿3 in the I-region were fabricated from InGaAsP (¿=1.26 ¿m). At ¿20 V, the 2.5 ¿m I-region of the 150 ¿m diameter mesas was completely swept out, the junction capacitance was below 1 pF, the dark current was less than 0.2 nA and the external quantum efficiency was 63% without a.r. coatings.
Keywords :
optical communication equipment; photodiodes; InGaAsP p-i-n photodiodes; MM waves; carrier concentration; dark current; junction capacitance; leakage current; optical communication equipment; quantum efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790466
