Title :
Recombination in gallium phosphide via a deep state associated with nickel
Author :
Peaker, A.R. ; Brunwin, R.F. ; Jordon, P. ; Hamilton, Blaine
Author_Institution :
University of Manchester Institute of Science & Technology, Manchester, UK
Abstract :
The properties of nickel in gallium phosphide are discussed in terms of its behaviour as a recombination centre. Although it possesses a large minority-carrier cross-section and is present in v.p.e. material in quite large concentrations, it is found to have a very low majority-carrier cross-section so that the recombination rate saturates at low excitation densities. Thus the centre is unlikely to be of importance in the recombination process in normal l.e.d. structures.
Keywords :
III-V semiconductors; deep levels; electron-hole recombination; gallium compounds; nickel; GaP; LED structures; Ni recombination centre; deep state; electron hole recombination; excitation densities; majority carrier cross section; minority carrier cross section;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790471
