• DocumentCode
    1018370
  • Title

    Preliminary c.w. reliability measurements on GaAs-(GaAl)As stripe lasers grown by metal-organic c.v.d.

  • Author

    Thrush, E.J. ; Whiteaway, J.E.A.

  • Author_Institution
    Standard Telecommunication Laboratories, Harlow, UK
  • Volume
    15
  • Issue
    20
  • fYear
    1979
  • Firstpage
    666
  • Lastpage
    667
  • Abstract
    Oxide-insulated 20 ¿m planar stripe-geometry lasers were fabricated from a double heterostructure GaAs-(GaAl)As wafer grown by metal-organic chemical vapour deposition. Preliminary c.w. life tests have been carried out on these lasers, and 1400 h of operation has been achieved with only 19% increase in threshold current.
  • Keywords
    III-V semiconductors; chemical vapour deposition; gallium arsenide; reliability; semiconductor junction lasers; CW reliability measurements; GaAs-(GaAl)As DH stripe lasers; metal organic CVD; semiconductor junction lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790473
  • Filename
    4256090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018370