Title :
Pumped Schottky diodes with noise temperatures of less than 100 K at 115 GHz
Author :
Keen, Nigel J. ; Kelly, William M. ; Wrixon, Gerard T.
Author_Institution :
Max-Planck-Institut fÿr Radioastronomie, Bonn, West Germany
Abstract :
New Schottky-barrier diodes, with an epitaxial layer thickness of < 1000 Å and doping 2.5×1016 cm¿3, yield a mixer noise temperature of 98 K at 115 GHz. The diodes have a diameter of 1.8 ¿m, and show repeatable performance. Measurements indicate negligible capacitance variation to at least +0.2 V. The noise temperature is competitive with values reported for Josephson and quasiparticle junctions.
Keywords :
Schottky-barrier diodes; mixers (circuits); solid-state microwave devices; Schottky barrier diodes; capacitance variations; doping; epitaxial layer; mixer noise temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790490
