• DocumentCode
    1018617
  • Title

    Temperature dependence of InGaAsP double-heterostructure laser characteristics

  • Author

    Nahory, R.E. ; Pollock, M.A. ; DeWinter, J.C.

  • Author_Institution
    Bell Laboratories, Holmdel, USA
  • Volume
    15
  • Issue
    21
  • fYear
    1979
  • Firstpage
    695
  • Lastpage
    696
  • Abstract
    We report the temperature dependence of threshold for InGaAsP d.h. lasers with wavelengths from 1.23 to 1.53 ¿m. Our results suggest that a recombination centre, rather than carrier leakage, is responsible for the temperature sensitivity of the thresholds.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; InGaAsP double heterostructure laser; recombination centre; temperature dependence; temperature sensitivity; thresholds;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19790495
  • Filename
    4256115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1018617