Title :
Temperature dependence of InGaAsP double-heterostructure laser characteristics
Author :
Nahory, R.E. ; Pollock, M.A. ; DeWinter, J.C.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
We report the temperature dependence of threshold for InGaAsP d.h. lasers with wavelengths from 1.23 to 1.53 ¿m. Our results suggest that a recombination centre, rather than carrier leakage, is responsible for the temperature sensitivity of the thresholds.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; InGaAsP double heterostructure laser; recombination centre; temperature dependence; temperature sensitivity; thresholds;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790495
