DocumentCode
1018694
Title
Temperature dependence and silane consumption during particle formation in Ar-silane RF capacitively coupled plasma
Author
Sorokin, M. ; Kroesen, G.M.W. ; Stoffels, W.W.
Author_Institution
Appl. Phys. Dept., Eindhoven Univ. of Technol., Netherlands
Volume
32
Issue
2
fYear
2004
fDate
4/1/2004 12:00:00 AM
Firstpage
731
Lastpage
737
Abstract
We propose a generalized model, based on a simple balance equation, explaining the temperature dependence of the agglomeration time of nanoclusters in Ar-SiH4 plasmas. This model allows easy incorporation of specific mechanisms and verification of their effect on particle growth. We consider extra silane consumption due to back diffusion, an important issue for the laboratory plasma experiments and modeling results interpretation.
Keywords
argon; dusty plasmas; high-frequency discharges; nanoparticles; plasma chemistry; plasma diagnostics; plasma transport processes; silicon compounds; Ar-SiH4; Ar-silane RF capacitively coupled plasma; agglomeration temperature dependence; back diffusion; balance equation; nanoclusters; particle growth; silane consumption; Dusty plasma; Electrodes; Plasma applications; Plasma chemistry; Plasma density; Plasma diagnostics; Plasma materials processing; Plasma temperature; Radio frequency; Temperature dependence; Complex plasmas; Silane; diagnostics; dust; harmonics; plasma CVD; plasma impedance; temperature dependence;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2004.826137
Filename
1308541
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