DocumentCode :
1018780
Title :
Low-frequency noise figure and its application to the measurement of certain transistor parameters
Author :
Gibbons, J.F.
Author_Institution :
Stanford University, Stanford, Calif.
Volume :
9
Issue :
3
fYear :
1962
fDate :
5/1/1962 12:00:00 AM
Firstpage :
308
Lastpage :
315
Abstract :
Low-frequency noise measurements are shown to provide a convenient and reasonably accurate (±10 per cent) means of measuring r\´_{b}. Their application to the measurement of the factor n in the junction law p_{e} = p_{n} (e^{{q}_{V/nkT}} - 1) is also described, though the values of n obtained from noise measurements do not check accurately with the values of n determined by other methods. Experimental determinations of the variation of low-frequency noise figure with emitter-bias current are also presented for several transistor types. The observed behavior suggests that the principal source of 1/f noise in low-noise transistors may be in the emitter-base transition region instead of on the base surfaces where it is placed in presently accepted noise models.
Keywords :
Bandwidth; Circuit noise; Contracts; Differential equations; Electron devices; Frequency; Helium; Low-frequency noise; Noise figure; Noise generators; Noise measurement; Particle measurements; Semiconductor device noise; Tensile stress; Thermal stresses;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1962.14988
Filename :
1473216
Link To Document :
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