DocumentCode
1018913
Title
Erratum: Preparation and properties of GaAs layers for novel f.e.t. structures
Author
Griffiths, R.J.M. ; Blenkinsop, I.D. ; Wight, D.R.
Volume
15
Issue
22
fYear
1979
Firstpage
731
Keywords
III-V semiconductors; chemical vapour deposition; field effect transistors; gallium arsenide; FET; GaAs layers; GaAs-Ga0.4Al0.6As heterostructures; etching; metal organic CVD; semi insulating GaAs substrates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19790523
Filename
4256146
Link To Document