Title :
Silicon-on-sapphire m.o.s.f.e.t.s fabricated by back-surface laser-anneal technology
Author :
Iwamatsu, Shinnosuke ; Ogawa, Michiko
Author_Institution :
Very Large Integration Technology Research Association, Kawasaki, Japan
Abstract :
Self-aligned aluminium-gate silicon-on sapphire (s.o.s.) m.o.s.f.e.t.s have been fabricated by applying laser-anneal technology from the back surface for activation of the ion-implanted channel layer. The threshold voltage and surface electron mobility were similar to the conventional silicon-gate m.o.s.f.e.t.s, but the low resistivity of gate and interconnection electrodes using aluminium is advantageous for high switching speed m.o.s. l.s.i.
Keywords :
field effect integrated circuits; insulated gate field effect transistors; large scale integration; Al gate; LSI; SOS; back surface; field effect integrated circuits; high switching speed; insulated gate field effect transistor; interconnection electrodes; ion implanted channel layer; laser annealing; resistivity; surface electron mobility; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19790588
