Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides

Author

Lee, Benjamin G. ; Biberman, Aleksandr ; Turner-Foster, Amy C. ; Foster, Mark A. ; Lipson, Michal ; Gaeta, Alexander L. ; Bergman, Keren

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY

Volume

21

Issue

3

fYear

2009

Firstpage

182

Lastpage

184

Abstract

We present ultra-broadband wavelength conversion in silicon photonic waveguides at a data rate of 40 Gb/s. The dispersion-engineered device demonstrates a conversion bandwidth spanning the entire S-, C-, and L-bands of the ITU grid. Using a continuous-wave C-band pump, an input signal of wavelength 1513.7 nm is up-converted across nearly 50 nm at a data rate of 40 Gb/s, and bit-error-rate measurements are performed on the converted signal.

Keywords

integrated optics; optical waveguides; optical wavelength conversion; photonic band gap; silicon; silicon-on-insulator; ultra wideband technology; Si; bit rate 40 Gbit/s; dispersion-engineered device; optical Kerr effect; optical frequency conversion; optical signal processing; silicon photonic waveguides; silicon waveguides; silicon-on-insulator technology; ultrabroadband wavelength conversion; wavelength 1513.7 nm; Optical frequency conversion; optical Kerr effect; optical signal processing; silicon-on-insulator technology;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2009945

Filename

4695970