• DocumentCode
    1019117
  • Title

    Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growth

  • Author

    Yoo, Hoi-Jun ; Hayes, J.R. ; Caneau, Catherine ; Bhat, Ritesh ; Koza, M.

  • Author_Institution
    Bellcore, Red Bank, NJ, USA
  • Volume
    25
  • Issue
    3
  • fYear
    1989
  • Firstpage
    191
  • Lastpage
    192
  • Abstract
    Reports the first demonstration of a lateral heterojunction bipolar transistor realised using selective area epitaxy to grow the emitter and collector structures. The transistor had a gain of 2 at a current density of 2 kA cm-2. The low current gain is directly attributable to the base width used in this novel structure and does not result from the regrown junctions which exhibited an ideality factor of 1.6.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; InP-GaInAsP; base width; collector structures; current density; emitter structures; gain; heterojunction bipolar transistor; ideality factor; lateral planar device; selective area epitaxial growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890138
  • Filename
    130858
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019117