Title :
Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growth
Author :
Yoo, Hoi-Jun ; Hayes, J.R. ; Caneau, Catherine ; Bhat, Ritesh ; Koza, M.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Reports the first demonstration of a lateral heterojunction bipolar transistor realised using selective area epitaxy to grow the emitter and collector structures. The transistor had a gain of 2 at a current density of 2 kA cm-2. The low current gain is directly attributable to the base width used in this novel structure and does not result from the regrown junctions which exhibited an ideality factor of 1.6.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; InP-GaInAsP; base width; collector structures; current density; emitter structures; gain; heterojunction bipolar transistor; ideality factor; lateral planar device; selective area epitaxial growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890138
