Title :
Ga0.47In0.53As JFETs and MESFETs with OM-VPE-grown GaAs surface layers
Author :
Selders, J. ; Roentgen, P. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Ga0.47In0.53As JFETs and MESFETs have been fabricated with a lattice-mismatched GaAs layer under the gate. The GaAs could be grown with good electrical and crystallo-graphic quality in spite of the large lattice mismatch by an OM-VPE process. Pn, Np and Schottky diodes were fabricated and applied to n-GaInAs FET channels. Both types of devices exhibited high transconductances of about 100 mS/mm.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; junction gate field effect transistors; semiconductor growth; vapour phase epitaxial growth; Ga0.47In0.53As JFETs; Ga0.47In0.53As MESFET; OM-VPE; Schottky diodes; lattice-mismatched GaAs layer; n-GaInAs FET channels; n-p diodes; p-n diodes; transconductance 100 mS/mm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860010
