• DocumentCode
    1019170
  • Title

    P-N-P variable capacitance diode theory

  • Author

    Vasileff, H.D.

  • Author_Institution
    Raytheon Company, Mountain View, Calif.
  • Volume
    9
  • Issue
    6
  • fYear
    1962
  • Firstpage
    499
  • Lastpage
    502
  • Abstract
    The symmetrical p-n-p structure may, under certain conditions, exhibit an effective nonlinear capacitance. These conditions are derived making use of Baker´s method of charge analysis. The nonlinearity is essentially due to the nonconstancy of the reverse current of each junction, brought about by properly doping the depletion layer space charge regions.
  • Keywords
    Capacitance; Diodes; Doping; Electron devices; Electron emission; Electrons; Frequency; Helium; Impedance; P-n junctions; Resistors; Semiconductor diodes; Solid state circuits; Space charge; Statistics; Switching circuits; Transient response; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1962.15026
  • Filename
    1473254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019170