• DocumentCode
    1019179
  • Title

    Electroluminescence from GaP p-n junctions at high injection levels

  • Author

    Gershenzon, M. ; Mikulyak, R.M.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N.J.
  • Volume
    9
  • Issue
    6
  • fYear
    1962
  • Firstpage
    503
  • Lastpage
    503
  • Keywords
    Absorption; Circuits; Current density; Diodes; Electrical resistance measurement; Electroluminescence; Feedback; Gallium arsenide; Infrared detectors; Laboratories; Optical reflection; P-n junctions; Radiative recombination; Relays; Solid state circuits; Spontaneous emission; Telephony;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1962.15027
  • Filename
    1473255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019179