Title :
Selective Zn diffusion in n-GaAs with a sputtered Si mask at 650°C
Author :
Omura, E. ; Vawter, G. Allen ; Coldren, Larry ; Merz, J.L.
Author_Institution :
University of California, Department of Electrical & Computer Engineering, Santa Barbara, USA
Abstract :
Zinc has been selectively diffused into n-GaAs substrates with a mask of Si deposited by magnetron sputtering at room temperature. No lateral enhanced diffusion along the substrate/mask interface is observed. At the diffusion temperature of 650°C studied here, no appreciable Si diffusion into the substrate is observed.
Keywords :
III-V semiconductors; diffusion in solids; gallium arsenide; masks; semiconductor technology; substrates; III-V semiconductor; magnetron sputtering; n-GaAs substrates; selective Zn diffusion; sputtered Si mask;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860016
