Digital circuit capacitance and switching analysis for ground bounce in ICs with a high-ohmic substrate

Substrate noise is a major obstacle for mixed-signal integration. Ground bounce is a major contributor to substrate noise generation due to the resonance caused by the inductance and the Vdd-Vss admittance that consists of the on-chip digital circuit capacitance of the MOS transistors, the decoupling, and the parasitics arising from the interconnect. In this paper, we address: 1) the dependence of the Vdd-Vss admittance on the different states of the circuit, the supply voltage, and the interconnect, and 2) the computation of the total supply current with ground bounce. By using a fast and accurate macromodeling approach, the Vdd-Vss admittances of several test circuits are computed with 2%-3% error relative to the values simulated from the complete SPICE level netlist, but several orders of magnitude faster in CPU time and with 10% maximum error relative to the measurements on a test ASIC fabricated in a 0.18-μm CMOS process on a high-ohmic substrate with 18 Ω·cm resistivity. The measurements also show that this admittance mainly depends only on the connectivity of the gates to the supply rail rather than their connectivity among each other.