Title :
Avalanche breakdown-double injection induced negative resistance in semiconductors
Author :
Steele, S. ; Ando, A. ; Lampert, L.
Author_Institution :
RCA Laboratories, Tokyo, Japan
Keywords :
Alloying; Crystals; Electrons; Frequency; Gallium arsenide; Impurities; Laboratories; Magnetic devices; Magnetic fields; P-i-n diodes; Plasma devices; Plasma measurements; Semiconductor diodes; Steady-state; Surface waves;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1962.15038
