• DocumentCode
    1019295
  • Title

    Low-threshold InGaAsP/InP 1.3 μm doubly buried-heterostructure lasers with a reactive-ion-etched facet

  • Author

    Saito, Hiroshi ; Naguchi, Y. ; Nagai, Hiroto

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi, Japan
  • Volume
    22
  • Issue
    1
  • fYear
    1986
  • Firstpage
    36
  • Lastpage
    38
  • Abstract
    The angled reactive-ion-etching (RIE) technique utilising a TiO2 mask and Cl2-Ar gas is successfully applied to facet mirror fabrication of 1.3 μm InGaAsP/InP doubly buried-heterostructure (DBH) lasers. A typical CW operation threshold current is 22 mA at 25°C, and light output power from one facet exceeds 20 mW. The result of the preliminary aging test is also presented.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; optical workshop techniques; semiconductor junction lasers; sputter etching; Cl2-Ar gas; DBM lasers; III-V semiconductors; InGaAsP/InP; TiO2 mask; aging test; angled RIE technique; doubly buried-heterostructure lasers; facet mirror fabrication; optical workshop techniques; reactive-ion-etched facet; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860025
  • Filename
    4256185
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019295