DocumentCode :
1019339
Title :
MOS Scaling
Author :
Hayes, Jim
Author_Institution :
Synertek
Volume :
13
Issue :
1
fYear :
1980
Firstpage :
8
Lastpage :
13
Abstract :
Basic MOS feature dimensions may fall to the 0.5μm level by the mid-1980´s. Such scaling will create new challenges related to registration accuracy, dimensional control, and defect density.
Keywords :
Circuits; MOS devices; Power dissipation; Space technology; Technological innovation; Very large scale integration; Voltage;
fLanguage :
English
Journal_Title :
Computer
Publisher :
ieee
ISSN :
0018-9162
Type :
jour
DOI :
10.1109/MC.1980.1653335
Filename :
1653335
Link To Document :
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