A 4×64 pixel CMOS image sensor for 3-D measurement applications

Author

Elkhalili, O. ; Schrey, O.M. ; Mengel, P. ; Petermann, M. ; Brockherde, W. ; Hosticka, B.J.

Author_Institution

Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, Germany

Volume

39

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1208

Lastpage

1212

Abstract

A 4×64 pixel 3-D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. The measurement range is up to 8 m with resolution of 1 cm. The scene depth is determined by measurement of the travel time of reflected laser pulses by employing a fast on-chip synchronous shutter (maximum shutter speed 30 ns). The multiple double short time integration (MDSI) algorithm enables suppression of the background illumination and correction for reflectance variations in the scene objects. The pixel size is 130×300 μm². The sensor chip has been realized in a 0.5-μm n-well standard CMOS process.

Keywords

CMOS image sensors; image processing equipment; measurement by laser beam; time of flight spectroscopy; 0.5 micron; 256 pixel; 3D measurement applications; 4 pixel; 64 pixel; 8 m; CMOS image sensor; CMOS imager; CMOS photo sensor; illumination suppression; laser pulses; multiple double short time Integration; on-chip synchronous shutter; pixel array; reflectance variations correction; scene depth; scene objects; time-of-flight; travel time; CMOS image sensors; Layout; Lighting; Optical pulses; Pixel; Pulse measurements; Reflectivity; Testing; Time measurement; Velocity measurement; -D; CMOS photo sensor; MDSI; image sensor; multiple double short time integration; pixel array;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2004.829927

Filename

1308599