DocumentCode
1019469
Title
Theoretical analysis of planar bulk-acoustic-wave response
Author
Elias, Elizabeth ; Jhunjhunwala, Ashok
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India
Volume
37
Issue
1
fYear
1990
Firstpage
2
Lastpage
12
Abstract
A detailed theoretical analysis for planar bulk-acoustic-wave (BAW) devices that results in a method for computing the bulk-acoustic-wave response for any orientation of any piezoelectric substrate is presented. The BAW responses for four devices is computed and are found to be in excellent agreement with published experimental results. The theory is used to optimize one of these devices by varying the thickness and interdigital transducer (IDT) separation so as to give minimum insertion loss. A similar optimization can be performed for other devices. The theory is also used to find a new BAW device with low insertion loss.<>
Keywords
lithium compounds; piezoelectric devices; ultrasonic devices; ultrasonic reflection; LiNbO/sub 3/ device; bulk wave power density; bulk-acoustic-wave response; far field analysis; interdigital transducer separation; interface reflection; minimum insertion loss; near field analysis; optimization; piezoelectric substrate; planar bulk-acoustic-wave devices; thickness; Acoustic reflection; Acoustic transducers; Crystalline materials; Frequency; Insertion loss; Piezoelectric transducers; Rough surfaces; Surface acoustic wave devices; Surface acoustic waves; Surface roughness;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/58.46960
Filename
46960
Link To Document