• DocumentCode
    1019556
  • Title

    Schottky barriers on silicon

  • Author

    Soshea, R.W. ; Atalla, M.M.

  • Author_Institution
    Hewlett-Packard Associates, Palo Alto, Calif.
  • Volume
    9
  • Issue
    6
  • fYear
    1962
  • Firstpage
    510
  • Lastpage
    511
  • Keywords
    Capacitance; Doping; Electrons; Gallium arsenide; Gold; Impurities; Ionization; Laboratories; Optical distortion; Schottky barriers; Schottky diodes; Silicon; Temperature; Thermal conductivity; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1962.15063
  • Filename
    1473291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019556