Title :
Two-dimensional electron gas at interface of a selectively doped InGaP/GaAs heterostructure
Author :
Cox, H.M. ; Hayes, J.R. ; Nottenburg, R.N. ; Hummel, S. ; Allen, S. James
Author_Institution :
Bell Communications Research, Murray Hill, USA
Abstract :
We report the first observation of a two-dimensional electron gas at the interface of an InGaP/GaAs heterojunction. The closely lattice-matched (¿a/a¿5×10¿4) epitaxial layers of InGaP were grown by vapour levitation epitaxy using a chloride transport technique with a resulting interface sheet carrier concentration of 7×1011 cm¿2.
Keywords :
III-V semiconductors; electron gas; gallium arsenide; gallium compounds; indium compounds; interface electron states; semiconductor epitaxial layers; semiconductor superlattices; Cl transport; chloride transport technique; interface sheet carrier concentration; lattice-matched epitaxial layers; selectively doped InGaP/GaAs heterostructure; two-dimensional electron gas; vapour levitation epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860050
