• DocumentCode
    1019596
  • Title

    Avalanche breakdown in structurally perfect junctions in silicon

  • Author

    Goetzberger, A. ; McDonald, Brent

  • Author_Institution
    Shockley Transistor, Palo Alto, Calif.
  • Volume
    9
  • Issue
    6
  • fYear
    1962
  • Firstpage
    511
  • Lastpage
    511
  • Keywords
    Avalanche breakdown; Breakdown voltage; Capacitance; Capacitance measurement; Cryogenics; Electric breakdown; Electrons; Gold; Impact ionization; Impurities; Ionization; Silicon; Space charge; Temperature; Thermal expansion; Thermal stresses; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1962.15067
  • Filename
    1473295
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1019596