DocumentCode

1019604

Title

Secondary ionization in silicon

Author

Moll, J.L. ; Van Overstraeten, R.

Author_Institution

Stanford University, Stanford, Calif.

Volume

9

Issue

6

fYear

1962

Firstpage

511

Lastpage

511

Keywords

Capacitance; Capacitance measurement; Electric breakdown; Electrons; Gold; Impact ionization; Impurities; Silicon; Space charge; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IRE Transactions on

Publisher

ieee

ISSN

0096-2430

Type

jour

DOI

10.1109/T-ED.1962.15068

Filename

1473296