Title :
High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy
Author :
Larsson, A. ; Mittelstein, M. ; Arakawa, Yasuhiko ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Department of Applied Physics, Pasadena, USA
Abstract :
Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79% and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8° (1.9 times diffraction limit) for a 100 ¿m-wide laser were obtained under pulsed conditions.
Keywords :
molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; beam divergence; diffraction limit; external quantum efficiency; graded-index waveguide separate-confinement heterostructure lasers; high-efficiency broad-area single-quantum-well lasers; molecular beam epitaxy; semiconductor laser; single-lobed far-field patterns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860054
