DocumentCode
1019673
Title
Electron beam switched P-N junctions
Author
Brown, A.V.
Author_Institution
IBM Corporation, Yorktown Heights, N. Y.
Volume
10
Issue
1
fYear
1963
fDate
1/1/1963 12:00:00 AM
Firstpage
8
Lastpage
12
Abstract
A high-speed, high-power switching device is analyzed and experimental results presented. The device consists of a back-biased p-n junction switched by an electron beam. A single position tube for use as a magnetic core driver has been tested. The device operated at a beam voltage of 19 kv and can give a 150-v, 1.5-a output pulse with a rise time of less than 4 nsec and a maximum device power dissipation of 14 w. Designs for a multiposition device and also a high-power amplifier, similar in operation to the single position device are discussed.
Keywords
Driver circuits; Electron beams; High power amplifiers; Magnetic analysis; Magnetic cores; P-n junctions; Power dissipation; Pulse amplifiers; Testing; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1963.15074
Filename
1473377
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