Title :
A 1.5-V full-swing BiCMOS logic circuit
Author :
Hiraki, Mitsuru ; Uano, K. ; Minami, Masataka ; Sato, Kazushige ; Matsuzaki, Nozomu ; Watanabe, Atsuo ; Nishida, Takashi ; Sasaki, Katsuro ; Seki, Koichi
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
11/1/1992 12:00:00 AM
Abstract :
A BiCMOS logic circuit applicable to sub-2-V digital circuits has been developed. A transiently saturated full-swing BiCMOS (TS-FS-BiCMOS) logic circuit operates twice as fast as CMOS at 1.5-V supply. A newly developed transient-saturation technique, with which bipolar transistors saturate only during switching periods, is the key to sub-2-V operation because a high-speed full-swing operation is achieved to remove the voltage loss due to the base-emitter turn-on voltage. Both small load dependence and small fan-in dependence of gate delay time are attained with this technique. A two-input gate fabricated with 0.3-μm BiCMOS technology verifies the performance advantage of TS-FS-BiCMOS over other BiCMOS circuits and CMOS at sub 2-V supply
Keywords :
BiCMOS integrated circuits; integrated logic circuits; 0.3 micron; 1.5 to 2 V; BiCMOS logic circuit; base-emitter turn-on voltage; bipolar transistors; high-speed full-swing operation; sub-2-V digital circuits; switching periods; transient-saturation technique; Associate members; BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; CMOS technology; Degradation; Delay effects; Logic circuits; Switching circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
