Title :
Integration of optical polymer pillars chip I/O interconnections with Si MSM photodetectors
Author :
Bakir, Muhannad S. ; Chui, Chi On ; Okyay, Ali K. ; Saraswat, Krishna C. ; Meindl, James D.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
7/1/2004 12:00:00 AM
Abstract :
We demonstrate the process integration and characterization of mechanically compliant optical polymer pillar chip I/O interconnections with Si metal-semiconductor-metal photodetectors (MSM-PDs). Polymer pillar waveguides with various cross-sectional geometry, size, and aspect ratio are fabricated on the active area of Ti-Si-Ti MSM-PDs. Some of the key performance metrics of the MSM-PDs before and after the process integration are reported. It is shown that the dark current of passivated Ti-Si-Ti PDs does not degrade as a result of the processing required to fabricate the polymer pillar I/O interconnections. In addition, the pillar integration does not degrade the responsivity as well as the normalized photo-to-dark current ratio of the MSM-PDs.
Keywords :
II-VI semiconductors; dislocations; mercury compounds; minority carriers; photodiodes; HgCdTe; RoA product; base material; dislocation density; dislocation dependence; long wavelength infrared photodiodes; low temperatures; minority carrier lifetime; shunt resistance contribution; temperature dependence; zero-bias impedance; zero-bias resistance-area product; Bandwidth; CMOS technology; Dark current; Measurement; Optical device fabrication; Optical interconnections; Optical polymers; Optical waveguides; Packaging; Photodetectors; Interconnections; optical waveguides; packaging; polymer waveguides; polymers;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.830643
