A new trench bipolar transistor for RF applications

Author

Hueting, Raymond J E ; Slotboom, Jan W. ; Melai, Joost ; Agarwal, Prabhat ; Magnée, Peter H C

Author_Institution

Philips Res., Leuven, Belgium

Volume

51

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1108

Lastpage

1113

Abstract

A new vertical trench SiGe heterojunction bipolar transistor (HBT) is proposed that improves the tradeoff between the cutoff frequency (f_T) and the off-state collector-base breakdown voltage (BV_cbo). Extensive device simulations show that a record f_T·BV_cbo product of about 2375 GHz·V can be obtained for an HBT having a trench field plate connected to the emitter and a linearly graded doping profile in the collector drift region, while about 700 GHz·V can be obtained for a standard optimized HBT. This large improvement is explained mainly by the suppression of the base-widening effect.

Keywords

BiCMOS integrated circuits; epitaxial growth; heterojunction bipolar transistors; semiconductor epitaxial layers; silicon compounds; 0.25 micron; RF design; SiGe; base link; bipolar complementary metal-oxide-semiconductor technology; bipolar multitransistor yield; external base polysilicon; heterojunction bipolar transistor; link resistance; passive devices; quasisingle-poly integration concept; selective epitaxy; silicon substrate; Bipolar transistors; Dielectric substrates; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFETs; Radio frequency; Semiconductor optical amplifiers; Silicon germanium; Surface resistance; HBTs; HF amplifiers; Heterojunction bipolar transistors; power semiconductor devices; silicon compounds; simulation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.829867

Filename

1308634