DocumentCode :
1019793
Title :
A 9.5-Gb/s Si-bipolar ECL array
Author :
Tamamura, Masaya ; Shiotsu, Shinichi ; Hojo, Masayasu ; Nomura, Katsunobu ; Emori, Shinji ; Ichikawa, Hiromichi ; Akai, Takao
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
Volume :
27
Issue :
11
fYear :
1992
fDate :
11/1/1992 12:00:00 AM
Firstpage :
1575
Lastpage :
1578
Abstract :
A 9.5-Gb/s Si-bipolar ECL array that has a gate delay of 35 ps, a risetime of 45 ps, and a falltime of 40 ps is described. The ECL circuit design and the chip layout were optimized. A Si-bipolar process with 0.3-μm emitter width and packaging capable of accepting 10-GHz signal were used. The array was used in three key circuits of an optical communication system: a decision circuit, a 4:1 multiplexer, and a 1:4 demultiplexer. Operation of the decision circuit at 9.5 Gb/s, of the 4:1 multiplexer at 6.7 Gb/s, and of the 1:4 demultiplexer at 6.7 Gb/s were confirmed
Keywords :
bipolar integrated circuits; demultiplexing equipment; elemental semiconductors; emitter-coupled logic; logic arrays; multiplexing equipment; optical communication equipment; silicon; 0.3 micron; 10 GHz; 35 ps; 45 ps; 6.7 Gbit/s; 9.5 Gbit/s; ECL array; ECL circuit design; Si bipolar logic circuit; chip layout; decision circuit; demultiplexer; falltime; gate delay; multiplexer; optical communication system; packaging; risetime; Circuit synthesis; Delay effects; Design optimization; Multiplexing; Optical arrays; Optical fiber communication; Packaging; Reflection; Resistors; Signal processing;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.165338
Filename :
165338
Link To Document :
بازگشت