Title :
Threshold Voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poisson´s equation
Author :
Katti, Guruprasad ; DasGupta, Nandita ; DasGupta, Amitava
Author_Institution :
John. F. Welch Technol. Centre, Bangalore, India
fDate :
7/1/2004 12:00:00 AM
Abstract :
A threshold voltage model for mesa-isolated fully depleted silicon-on-insulator (FDSOI) MOSFETs, based on the analytical solution of three-dimensional (3-D) Poisson´s equation is presented for the first time in this paper. The separation of variables technique is used to solve the 3-D Poisson´s equation analytically with appropriate boundary conditions. Simple and accurate analytical expressions for the threshold voltage of the front and the back gate are derived. The model is able to predict short channel as well as narrow width effects in mesa-isolated FDSOI MOSFETs. The model is validated by comparing with the experimental results as well as with the numerical results available in the literature.
Keywords :
MOSFET; Schottky barriers; Schottky diodes; passivation; semiconductor device measurement; semiconductor device models; silicon-on-insulator; surface treatment; Ψ-MOSFET; Hg-Si; HgFET; SOI material characterization; Schottky barrier; Schottky diodes; active generation site; barrier height; current-voltage measurements; doping density; drain contacts; electron mobility; hole mobility,; interface trap density; oxide charge; pseudo-MOSFET; semiconductor device measurements; semiconductor device modeling; silicon-on-insulator; source contact; surface passivation; threshold voltage; CMOS technology; Circuits; Geometry; MOSFETs; Poisson equations; Semiconductor device modeling; Silicon on insulator technology; Solid modeling; Space technology; Threshold voltage; Analytical model; MOSFET; SOI; silicon-on-insulator; small geometry; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.830648
