Gate oxide reliability under ESD-like pulse stress

Author

Wu, Jie ; Rosenbaum, Elyse

Author_Institution

Intel Corp., Santa Clara, CA, USA

Volume

51

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1192

Lastpage

1196

Abstract

The reliability of very thin gate oxide under electrostatic discharge-like pulse stress is investigated. Time-dependent dielectric breakdown of gate oxide with thicknesses ranging from 2.2 to 4.7 nm is characterized down to the nanosecond time regime. The 1/E model best fits the time-to-breakdown data. Self-heating does not need to be incorporated into the time-to-breakdown model. The oxide trap generation rate is a function of the stress pulse-width for nanosecond and microsecond stress pulses.

Keywords

electrostatic discharge; failure analysis; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; 1/E model; 2.2 to 4.7 nm; ESD-like pulse stress; electrostatic discharge; gate oxide reliability; nanosecond time regime; oxide trap generation rate; self-heating; stress pulse-width; thin gate oxide; time-dependent dielectric breakdown; Breakdown voltage; Circuits; Clamps; Dielectric breakdown; Electric breakdown; Electrostatic discharge; Protection; Pulse generation; Testing; Thermal stresses; Electrostatic discharge; TDDB; gate oxide; reliability; time-dependent dielectric breakdown;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.829894

Filename

1308646