Physics-based mathematical conditioning of the MOSFET surface potential equation

Author

Wu, Weimin ; Chen, Ten-Lon ; Gildenblat, Gennady ; McAndrew, Colin C.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

51

Issue

7

fYear

2004

fDate

7/1/2004 12:00:00 AM

Firstpage

1196

Lastpage

1199

Abstract

The traditional form of the implicit equation for the surface potential (φ_s) in metal-oxide-semiconductor field-effect transistors (MOSFETs) works well except near the flatband point φ_s=0 where it is both unphysical and ill-conditioned mathematically. This represents a significant difficulty for recent surface potential-based models, which require φ_s evaluation from the accumulation to the strong inversion region. Detailed physical analysis combined with two-dimensional numerical simulations is used to develop a physics-based well-conditioned version of the surface potential equation.

Keywords

MOSFET; numerical analysis; semiconductor device models; surface potential; 2D numerical simulations; Imref splitting; MOSFET; flatband point; implicit equation; inversion region; metal-oxide-semiconductor field-effect transistors; physical analysis; physics-based mathematical conditioning; surface potential equation; surface potential-based models; Charge carrier processes; Electrons; Equations; FETs; MOSFET circuits; Numerical simulation; Semiconductor device doping; Substrates; Thermal factors; Voltage; Imref splitting; MOSFETs; metal–oxide–semiconductor field-effect transistors; surface potential;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.829902

Filename

1308647